mitsubishi rf power mos fet electrostatic sensitive device RD06HHF1 rohs compliance, silicon mosfet pow e r transistor 30mhz,6w RD06HHF1 mitsubishi electric 7 mar 2008 o bserve handling precautio n s description RD06HHF1 is a mos fet type transistor specifically designed for hf rf power amplifiers applications. features high power gain: pout>6w, gp>16db @vdd=12.5v,f=30mhz application for output stage of high power amplifiers in hf band mobile radio sets. rohs compliant RD06HHF1-101 is a rohs compliant products. rohs compliance is indicate by the letter ?g? after the lot outline drawing not e : t o r e l a n c e of no des i gnat i o n m ean s t y pi cal val ue. d i m e n s i on i n m m . 0. 5+ 0 . 1 0 / - 0. 1 5 pi n s 1: g a t e 2 : s o u rce 3: d r a i n 1. 3+ / - 0 . 4 1 2 . 3 m i n 2. 5 9. 5 m a x 5 deg 2. 5 4 . 5 + / - 0 . 5 3 . 1 + / - 0 . 6 3. 6 + / - 0 . 2 0 . 8+ 0. 10 / - 0 . 1 5 1. 2+ / - 0 . 4 2 9. 1+ / - 0 . 7 1 2 . 3 + / - 0 . 6 9 + / - 0 . 4 4 . 8 m a x 1 3 . 2 + / - 0 . 4 3 2 marking. this product include the lead in high melting temperaturetype solders. how ever,it applicable to the following exceptions of rohs directions. 1.lead in high melting temperature type solders(i.e.ti n-lead solder alloys containing more than85% lead.) 1/8
mitsubishi rf power mos fet electrostatic sensitive device RD06HHF1 rohs compliance, silicon mosfet pow e r transistor 30mhz,6w RD06HHF1 mitsubishi electric 7 mar 2008 o bserve handling precautio n s absolute maximum ratings (tc=25 c unless otherwise noted) s y m b o l p a r a m e t e r conditions r atings unit v dss drain to source voltage vgs=0v 50 v v gs s gate to source voltage vds=0v +/- 20 v p c h c h a n n e l d i s s i p a t i o n tc=25 c 2 7 . 8 w p i n i n p u t p o w e r zg=zl=50 ? 0 . 3 w i d d r a i n c u r r e n t - 3 a t c h c h a n n e l t e m p e r a t u r e - 1 5 0 c tstg storage temperature - -40 to +150 c rth j-c thermal resistance junction to case 4.5 c/w note 1: above paramet ers are guaranteed independently . electrical characteristics (tc=25 c , unless otherwise noted) l i m i t s u n i t s y m b o l p a r a m e t e r c o n d i t i o n s m i n t y p max. i dss drain cutoff current v ds =17v, v gs = 0 v - - 1 0 u a i gs s gate c u toff c u rrent v gs =10v, v ds = 0 v - - 1 u a v th gate threshold voltage v ds =12v, i ds = 1 m a 1 . 9 - 4 . 9 v p o u t o u t p u t p o w e r 6 1 0 - w d drain efficiency v dd =12.5v, pin=0.15w, f=30mhz, idq=0.5a 5 5 6 5 - % load vswr tolerance v dd =15.2v,po=6w(pin control) f=30mhz,idq=0.5a,zg=50 ? load vswr=20:1(all phase) no destroy - note : above parameters , ratings , lim its and conditions are subject to change. 2/8
mitsubishi rf power mos fet electrostatic sensitive device RD06HHF1 rohs compliance, silicon mosfet pow e r transistor 30mhz,6w RD06HHF1 mitsubishi electric 7 mar 2008 o bserve handling precautio n s typical characteristics c h a n nn el di s s i p a t i o n v s . a m b i e n t te m p e r a t u r e 0 10 20 30 40 50 0 4 0 8 0 1 2 0 16 0 2 00 ambi e n t t e mper at ure ta ( c) cha nne l di ss i pation pc h( w ) vg s- i d s cha r a c t e ri st i c s 0 1 2 3 4 5 02 46 8 1 0 vgs ( v) id s(a ) ta =+25 c vd s = 1 0 v v d s vs. cr s s c h a r a c t e r i st i c s 0 2 4 6 8 10 01 0 2 0 3 0 vds ( v) c r ss( p f ) t a =+2 5c f= 1m hz v d s vs. cos s c h a r a c t e r i st i c s 0 20 40 60 80 10 0 01 0 2 0 3 0 vds( v) c o ss( p f ) ta =+25 c f= 1 m hz v d s vs. ci s s ch a r a c t e r i st i c s 0 10 20 30 40 50 60 01 0 2 0 3 0 vds ( v) c i ss(p f ) ta =+25 c f= 1m h z vd s- i d s cha r a c t e ri st i c s 0 1 2 3 4 0246 8 1 0 vd s ( v ) id s(a ) t a = + 25c vg s=9 v vg s=8 v vg s=7 v vg s=6 v vg s=5 v v g s = 10v 3/8
mitsubishi rf power mos fet electrostatic sensitive device RD06HHF1 rohs compliance, silicon mosfet pow e r transistor 30mhz,6w RD06HHF1 mitsubishi electric 7 mar 2008 o bserve handling precautio n s typical characteristics pin- po c h a r a c t e ri st ics 0 10 20 30 40 50 -1 0 0 1 0 2 0 pi n ( dbm) p o (d b m ) , g p (d b ) , id d ( a ) 0 20 40 60 80 100 d( %) ta= + 25c f = 30m h z v dd= 12.5 v i dq= 0.5a po 3 3 3 gp p i n- p o ch a r a c t e ri s t i c s 0 2 4 6 8 10 12 14 0. 0 0 . 1 0. 2 0 . 3 pi n( w ) po ut ( w ) , idd( a) 30 40 50 60 70 80 90 10 0 d( %) po d idd ta= 25c f = 30m h z v dd= 12.5 v i dq= 0.5a vd d- po cha r a ct e r i s t i cs 0 2 4 6 8 10 12 14 16 4 6 8 10 1 2 14 vd d( v) po( w ) 0 1 2 3 4 i dd(a) idd t a = 25 c f= 30m h z p i n= 0.1 5 w idq= 0.5 a z g = z i= 50 ohm po vgs- ids cha r a c t o ri st i c s 2 0 1 2 3 4 5 02 4 6 8 1 0 vgs( v) id s( a ) ,g m(s ) v d s = 10v t c =-25~+ 75 c -2 5 c +7 5c +25 c vgs - g m c h ar ac t o r i s t i c s 0.0 0.5 1.0 1.5 2.0 01 23 45 6 7 89 vgs ( v ) g m( s) vds = 10 v tc =-25 ~+75 c -25c +75 c +25 c 4/8
mitsubishi rf power mos fet electrostatic sensitive device RD06HHF1 rohs compliance, silicon mosfet pow e r transistor 30mhz,6w RD06HHF1 mitsubishi electric 7 mar 2008 o bserve handling precautio n s test circuit(f=30mhz) l4: 6t u r n s , i . d 5. 6m m , d 0 . 9 m m copper w i r e c 2 : 470pf * 2 i n par al l e l 67 75 c2 c2 l5 100pf 1oh m l3 220pf 56pf 1k oh m l3: 5t u r n s , i . d 5. 6m m , d 0 . 9 m m copper w i r e l2: 10t u r n s , i . d 6m m , d 1 . 6 m m s i l v er pl at ed c opp er w i r e l2 l1 8. 2k oh m 65 46 18 1. 5 d i m e ns i o ns : m m rf - i n vd d vgg l1: 10t u r n s , i . d 8m m , d 0 . 9 m m c opper w i r e 330u f , 50v c1 rf - o ut c 1 : 100pf , 0. 022u f, 0. 1u f i n par al l e l no te :b o a r d m a te r i a l - t e fl o n s u b s tr a t e m i c r o s t r i p l i n e w i dt h = 4. 2m m / 50oh m , er : 2 . 7 , t = 1. 6m m 36 42 45 5 16 35 220pf 100pf c1 c1 10u f , 50v * 3pc s c1 75 91 150/ 120pf 200/ 200pf 56pf l6 77. 5 100 l5: 4t u r n s , i . d 5. 6m m , d 0 . 9 m m copper w i r e p = 0. 5m m 84pf 30pf 100pf l4 91 100 l6: 7t u r n s , i . d 5. 6m m , d 0 . 9 m m copper w i r e 88 5/8
mitsubishi rf power mos fet electrostatic sensitive device RD06HHF1 rohs compliance, silicon mosfet pow e r transistor 30mhz,6w RD06HHF1 mitsubishi electric 7 mar 2008 o bserve handling precautio n s input/output impedance vs.frequency characteristics f=30mhz zout zo=50
f=30mhz zin zin , zout f z i n z o u t ( m h z ) ( o h m ) ( o h m ) c o n d i t i o n s 3 0 6 5 . 0 6 - j 1 5 0 . 9 8 . 7 5 - j 4 . 9 2 p o = 1 0 w , vdd=12.5v,pin=0.15w 6/8
mitsubishi rf power mos fet electrostatic sensitive device RD06HHF1 rohs compliance, silicon mosfet pow e r transistor 30mhz,6w RD06HHF1 mitsubishi electric 7 mar 2008 o bserve handling precautio n s RD06HHF1 s-parameter dat a (@vdd=12.5v, id=500ma) f r eq. [mhz ] ( m ag) ( ang) ( m ag) ( a n g ) ( m ag) ( ang) ( m ag) ( ang) 10 0.985 - 18.8 34.407 165 .9 0.008 76.2 0 .826 - 17.3 30 0.900 - 50.4 30.427 143 .3 0.021 59.4 0 .767 - 43.6 50 0.799 - 74.4 24.979 126 .1 0.029 43.2 0 .677 - 65.0 100 0.667 - 109.6 15.565 100 .7 0.032 27.3 0 .547 - 96.8 150 0.636 - 129.0 10.953 85.1 0 .032 23.1 0 .523 - 113.4 200 0.630 - 140.1 8 .194 73.7 0 .029 25.3 0 .528 - 124.7 250 0.645 - 148.2 6 .528 63.9 0 .027 34.5 0 .561 - 132.7 300 0.663 - 155.0 5 .315 55.2 0 .027 49.1 0 .588 - 139.6 350 0.685 - 160.7 4 .437 47.4 0 .031 61.8 0 .622 - 145.9 400 0.708 - 165.9 3 .771 39.9 0 .039 71.0 0 .657 - 151.7 450 0.729 - 170.8 3 .233 33.2 0 .048 75.8 0 .686 - 157.0 500 0.752 - 175.4 2 .826 26.8 0 .059 77.9 0 .715 - 162.3 550 0.771 179.9 2 .475 20.7 0 .070 76.9 0 .743 - 167.6 600 0.789 175.4 2 .186 15.2 0 .083 76.1 0 .763 - 172.3 650 0.804 171.2 1 .943 9.7 0 .095 73.7 0 .789 - 177.3 700 0.819 166.9 1 .738 4.6 0 .108 71.0 0 .804 178.1 750 0.834 162.6 1 .560 0.0 0 .120 68.1 0 .820 173.5 800 0.842 158.5 1 .410 - 4 .5 0.133 65.0 0 .837 169.0 850 0.851 154.3 1 .275 - 8 .7 0.145 61.6 0 .847 164.8 900 0.859 150.3 1 .160 - 1 2 . 6 0 .157 58.2 0 .858 160.2 950 0.866 146.2 1 .058 - 1 6 . 9 0 .167 54.5 0 .869 155.7 1000 0.870 142.3 0 .963 - 2 0 . 0 0 .179 51.0 0 .876 151.8 s11 s 21 s12 s 22 7/8
mitsubishi rf power mos fet electrostatic sensitive device RD06HHF1 rohs compliance, silicon mosfet pow e r transistor 30mhz,6w RD06HHF1 mitsubishi electric 7 mar 2008 o bserve handling precautio n s mitsubishi electric corporation puts the maximum effo rt into making semiconductor products better and more reliable, but there is alw a y s the possi bility that trouble may occur w i th them. t r ouble w i th semiconductors may lead to personal injury , fire or property damage. remember to gi ve due consideration to safety w hen making y our circuit designs, w i th appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. keep safety first in y our circuit designs! do not use the device at the exceeded the maximum rating condition. in case of plastic molded devices, the exceeded maximum rating condition may cause blow out, smolderi ng or catch fire of the molding resin due to extreme short current flow betw een the drain and the source of the device. t hese re sults causes in fire or injury . w a rning ! 8/8
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